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Journal Articles

Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito

IEEE Transactions on Nuclear Science, 46(6), p.1578 - 1585, 1999/12

https://doi.org/10.1109/23.819124
 Times Cited Count：23 Percentile：83.04(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito

Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.10 - 15, 1998/00

no abstracts in English

JAEA Reports

Evaluation of number of hole-electron pairs induced by irradiation in silicon-nitride layers and analysis of charge trapping mechanisms in metal-insulator-semiconductor structure with silicon-nitride layers

Onishi, Kazunori*; Takahashi, Yoshihiro*; *; Yoshikawa, Masahito

JAERI-Research 95-090, 40 Pages, 1996/01

JAERI-Research-95-090.pdf:1.41MB

no abstracts in English

Journal Articles

Test structure for determining the charge distribution in the oxide of MOS structure

Takahashi, Yoshihiro*; Imaki, Shunsaku*; Onishi, Kazunori*; Yoshikawa, Masahito

Proceedings of IEEE 1995 International Coferece on Microelectronic Test Structures, Vol.8, p.243 - 246, 1995/03

no abstracts in English

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